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Major Papers Published on SOS Technology

  1. Lyubutin S.K., Rukin S.N., Timoshenkov S.P. The study of the semiconductor opening switch in powerful pulse generators with an intermediate inductive storage.// IX Symposium on High-Current Electronics. Abstracts. p.p. 218-219. 1992. Russia (in Russian).
  2. Kotov Yu.A., Rukin S.N., Filatov A.L. High-current electron accelerator with a semiconductor opening switch.// IX Symposium on High-Current Electronics. Abstracts. p.p. 220-221. 1992. Russia (in Russian).
  3. Kotov Yu.A., Mesyats G.A., Rukin S.N., Filatov A.L., Lyubutin S.K. A novel nano-second semiconductor opening switch for megavolt repetitive pulsed power technology: experiment and applications. // In Proc.: IX Int. IEEE Pulsed Power Conference. Albuquerque, NM, USA, 1993. V. 1. P. 134 - 139.
  4. Kotov Yu.A., Mesyats G.A., Rukin S.N., Filatov A.L. Solid-state opening switch for generation of high-power nanosecond pulses.// Dokl.Akad.Nauk. 1993. v. 330. No. 3. p.p. 315-317 (in Russian).
  5. Darznek S.A., Kotov Yu.A., Mesyats G.A., Rukin S.N. SOS-effect: nanosecond cutoff of superdense currents in semiconductors.// Dokl.Akad.Nauk. 1994. v. 334. No. 3. p.p. 304-306 (in Russian).
  6. Rukin S.N., Kotov Yu.A., Mesyats G.A., Filatov A.L., Lyubutin S.K., Alichkin E.A., Darznek S.A., Telnov V.A., Slovikovskii B.G., Timoshenkov S.P., Bushlyakov A.I., Turov A.M. Pulsed power accelerator technology based on solid-state semiconductor opening switches (SOS). // In Proc.: X Int. Conf. on High Power Particle Beams., San Diego, CA, USA, 1994. V. 1. P. 33 - 36.
  7. Lyubutin S.K., Rukin S.N., Timoshenkov S.P. High-voltage pulse generator.// RF Patent No. 2063103. BI. 1996. No. 18 (in Russian).
  8. Kotov Yu.A., Lyubutin S.K., Rukin S.N., Filatov A.L. High-current pulse accelerator.// RF Patent No. 2059345. BI. 1996. No. 12 (in Russian).
  9. Mesyats G.A., Rukin S.N., Lyubutin S.K., Darznek S.A., Litvinov Ye.A., Telnov V.A., Tsiranov S.N., Turov A.M. Semiconductor opening switch research at IEP. // In Proc.: X Int. IEEE Pulsed Power Conference. Albuquerque, NM, USA, 1995. V. 1. P. 298 - 305.
  10. Kotov Yu.A., Mesyats G.A., Rukin S.N., Telnov V.A., Slovikovskii B.G., Timoshenkov S.P., Bushlyakov A.I. Megavolt nanosecond 50 kW average power all-solid-state driver for commercial applications. // In Proc.: X Int. IEEE Pulsed Power Conference. Albuquerque, NM, USA, 1995. V. 2. P. 1227 - 1230.
  11. Rukin S.N., Lyubutin S.K., Kostirev V.V., Telnov V.A. Repetitive 200 kV nanosecond all-solid-state pulser with a semiconductor opening switch. // In Proc.: X Int. IEEE Pulsed Power Conference. Albuquerque, NM, USA, 1995. V. 2. P. 1211 - 1214.
  12. Kotov Yu.A., Mesyats G.A., Rukin S.N., Filatov A.L., Lyubutin S.K. Nanosecond semiconductor opening switch for megavolt repetitive pulsed power technology. //In Proc.: Int. Society for Optical Engineering (SPIE), San Hose, USA, 1995. V. 2374. P. 98 - 103.
  13. Lyubutin S.K., Mesyats G.A., Rukin S.N., Slovikovskii B.G., Turov A.M. New solid-state opening switches for repetitive pulsed power technology. // In Proc.: XI Int. Conf. on High Power Particle Beams., Prague, Czech Republic, 1996. V. 1. P. 135 - 138.
  14. Darznek S.A., Mesyats G.A., Rukin S.N., Tsiranov S.N. Theoretical model of the SOS effect. // In Proc.: XI Int. Conf. on High Power Particle Beams., Prague, Czech Republic, 1996. V. 2. P. 1241 - 1244.
  15. Rukin S.N. Device for magnetic compression of pulses.// RF Patent No. 2089042. BI. 1997. No. 24 (in Russian).
  16. Lyubutin S.K., Mesyats G.A., Rukin S.N., Slovikovskii B.G. Repetitive nanosecond all-solid-state pulsers based on SOS diodes. // In Proc.: XI Int. IEEE Pulsed Power Conference. Baltimore, Maryland, USA, 1997.
  17. Lyubutin S.K., Mesyats G.A., Rukin S.N., Slovikovskii B.G. Subnanosecond high-density current interruption in SOS diodes. // In Proc.: XI Int. IEEE Pulsed Power Conference. Baltimore, Maryland, USA, 1997.
  18. Lyubutin S.K., Mesyats G.A., Rukin S.N., Slovikovskii B.G. Subnanosecond cutoff of current in powerful semiconductor SOS-diodes.// Dokl.Akad.Nauk. 1998. v. 360. No. 4. p.p. 477-479 (in Russian).
  19. Darznek S.A., Lyubutin S.K., Rukin S.N., Slovikovskii B.G., Tsiranov S.N. SOS diodes: high-current nanosecond opening switches // Electrotekhnika. 1999. No 4. pp. 20 - 28 (in Russian).
  20. Rukin S.N. High-Power Nanosecond Pulse Generators Based on Semiconductor Opening Switches (Review) // Instruments and Experimental Techniques. V. 42. No 4. 1999. pp. 439 - 467.
  21. Mesyats G.A., Lyubutin S.K., Rukin S.N., Darznek S.A., Ponomarev A.V., Slovikovskii B.G., Timoshenkov S.P., Bushlyakov A.I., Tsiranov S.N. SOS-based pulsed power: development and applications // In Proc.: XII Int. IEEE Pulsed Power Conference. Monterey, California, USA, 1999. V. 1 . P. 153 - 156.
  22. Mesyats G.A., Lyubutin S.K., Rukin S.N., Darznek S.A., Ponomarev A.V., Slovikovskii B.G., Timoshenkov S.P., Bushlyakov A.I., Tsiranov S.N. SOS-based pulsed power: development and applications // In Proc.: XII Int. IEEE Pulsed Power Conference. Monterey, California, USA, 1999. V. 1 . P. 153 - 156.
  23. Mesyats G.A., Lyubutin S.K., Rukin S.N., Slovikovskii B.G. Repetitive short pulse SOS-generators // In Proc.: XII Int. IEEE Pulsed Power Conference. Monterey, California, USA, 1999. V. 2 . P. 1226 - 1229.
  24. Lyubutin S.K., Rukin S.N., Slovikovskii B.G., Tsiranov S.N. Experimental study of SOS-based generator for low impedance load // In Proc.: XII Int. IEEE Pulsed Power Conference. Monterey, California, USA, 1999. V. 2 . P. 1230 - 1233.
  25. Darznek S.A., Rukin S.N., Tsiranov S.N. Effect of Structure Doping Profile on the Current Switching-Off Process in Power Semiconductor Opening Switches // Technical Physics. V. 45. No 4. 2000. pp. 436 - 442.
  26. Lyubutin S.K., Rukin S.N., Slovikovskii B.G., Tsiranov S.N. A Semiconductor Opening Switch-Based Quasi-Rectangular Pulse Generator Operating into a Low-Impedance Load // Instruments and Experimental Techniques. V. 43. No 1. 2000. pp. 66 - 72.
  27. Lyubutin S.K., Rukin S.N., Slovikovskii B.G. A Compact Semiconductor Opening Switch-Based Generator with a 300-kV Output Voltage and up to 2-kHz Pulse Repetition Rate // Instruments and Experimental Techniques. V. 43. No 1. 2000. pp. 73 - 77.
  28. Darznek S.A., Lyubutin S.K., Rukin S.N., Slovikovskii B.G., Tsiranov S.N. Semiconductor Opening Switch // Patent of Russian Federation № 2156014, H 01 L 29/86, 2000 (in Russian).
  29. D.L. Kuznetsov, S.K. Lyubutin, G.A. Mesyats, Yu.N. Novoselov, S.N. Rukin, B.G. Slovikovsky, E.A. Kharlov. Compact SOS-based 400-keV electron beam accelerator // Proc. of 13th Int. Conf. on High Power Particle Beams, Nagaoka, Japan, June 25-30, 2000, p. 964 - 967.
  30. G.A. Mesyats, A.V. Ponomarev, S.N. Rukin, B.G. Slovikovsky, S.P. Timoshenkov, A.I. Bushlyakov. 1-MV, 500-Hz all-solid-state nanosecond driver for streamer corona discharge tecnologies // Proc. of 13th Int. Conf. on High Power Particle Beams, Nagaoka, Japan, June 25-30, 2000, p. 192 - 195.
  31. Lyubutin S.K., Rukin S.N., Slovikovskii B.G., Tsiranov S.N. High-Frequency Pulse Generators Based on SOS Diodes with Subnanosecond Current Cutoff Time // Instruments and Experimental Techniques. V. 43. No 3. 2000. pp. 331 - 338.
  32. Рукин С.Н., Цыранов С.Н. Исследование процесса субнаносекундного обрыва тока в мощных полупроводниковых прерывателях // Письма в ЖТФ. 2000, том 26, вып. 18, с. 41 - 46.
  33. Rukin S.N., Darznek S.A., Lyubutin S.K., Mesyats G.A., Slovikovskii B.G., Tsiranov S.N. High-current subnanosecond switching by semiconductor devices for pulsed power applications // Proc. of 12th Symposium on High Current Electronics, Tomsk, Russia, Sept. 24-29, 2000, p. 235 - 239.
  34. Zagulov F. Ya., Kladukhin V.V., Kuznetsov D.L., Lyubutin S.K., Novoselov Yu.N., Rukin S.N., Slovikovskii B.G., and Kharlov E.A. A High-Current Nanosecond Electron Accelerator with a Semiconductor Opening Switch. Instruments and Experimental Techniques, Vol. 45, No. 5, 2000, pp. 647 - 651.